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| HAT2064R Silicon N Channel Power MOS FET Power Switching ADE-208-930G (Z) 8th. Edition May 2000 Features * * * * Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance R DS(on) = 5.0 m typ (at VGS = 10V) Outline SOP-8 8 5 76 56 7 8 DD D D 3 12 4 4 G 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain SSS 123 HAT2064R Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel to Ambient Thermal Impedance Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR Pch Note2 Note2 Note1 Ratings 30 20 16 128 16 2.5 50 150 - 55 to + 150 Unit V V A A A W C/W C C ch-a Tch Tstg 1. PW 10 s, duty cycle 1% 2. When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW 10s 2 HAT2064R Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltege drain current Symbol V(BR)DSS V(BR)GSS I GSS I DSS Min 30 20 -- -- 1.0 -- -- 18 -- -- -- -- -- -- -- -- -- -- -- -- Typ -- -- -- -- -- 5.0 7.0 30 2200 600 330 40 6 8 20 35 60 16 0.9 50 Max -- -- 10 1 2.5 6.3 10 -- -- -- -- -- -- -- -- -- -- -- 1.17 -- Unit V V A A V m m S pF pF pF nc nc nc ns ns ns ns V ns Test Conditions I D = 10 mA, VGS = 0 I G = 100 A, VDS = 0 VGS = 16 V, V DS = 0 VDS = 30 V, VGS = 0 VDS = 10 V, I D = 1 mA I D = 8 A, VGS = 10 V Note3 I D = 8 A, VGS = 4.5 V Note3 I D = 8 A, VDS = 10 V Note3 VDS = 10 V VGS = 0 f = 1 MHz VDD = 10 V VGS = 10 V I D = 16 A VGS = 10 V, ID = 8 A VDD 10 V RL = 1.25 Rg = 4.7 IF = 16 A, VGS = 0 Note3 IF = 16 A, VGS = 0 diF/ dt = 50 A/ s Gate to source cutoff voltage VGS(off) Static drain to source on state RDS(on) resistance Forward transfer admittance Input capacitance Output capacitance RDS(on) |yfs| Ciss Coss Reverse transfer capacitance Crss Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time Note: 3. Pulse test Qg Qgs Qgd t d(on) tr t d(off) tf VDF t rr 3 HAT2064R Main Characteristics Power vs. Temperature Derating 4.0 Pch (W) I D (A) Test Condition : When using the glass epoxy board (FR4 40x40x1.6 mm), PW < 10 s 3.0 500 10 s Maximum Safe Operation Area 100 PW Op era tio n( 10 1m 0 s 10 Channel Dissipation Drain Current DC =1 s 0m 2.0 s 1.0 1 Operation in this area is limited by R DS(on) 0.1 Ta = 25 C 1 shot Pulse PW N < 1 ote 0s 4 ) 0 50 100 150 Ta (C) 200 Ambient Temperature 0.01 0.1 0.3 1 3 10 30 100 Drain to Source Voltage V DS (V) Note 4 : When using the glass epoxy board (FR4 40x40x1.6 mm) Typical Output Characteristics 50 10V 3.5 V I D (A) 40 4.5 V 30 3V 20 50 Pulse Test (A) 40 Typical Transfer Characteristics V DS = 10 V Pulse Test ID Drain Current 30 25C Tc = 75C -25C Drain Current 20 10 VGS = 2.5 V 10 0 2 4 6 Drain to Source Voltage 8 10 V DS (V) 0 1 2 3 Gate to Source Voltage 5 4 V GS (V) 4 HAT2064R Drain to Source Saturation Voltage vs. Gate to Source Voltage V DS(on) (V) 0.20 Pulse Test Static Drain to Source on State Resistance vs. Drain Current 100 Pulse Test 50 20 10 5 2 1 0.1 0.2 0.5 1 2 5 10 20 50 100 Drain Current I D (A) VGS = 4.5 V 10 V 0.16 Drain to Source Voltage 0.12 0.08 I D = 10 A 0.04 5A 2A 4 8 12 Gate to Source Voltage 16 20 V GS (V) 0 Static Drain to Source on State Resistance R DS(on) (m ) Pulse Test 16 I D = 2 A, 5 A, 10 A Forward Transfer Admittance |yfs| (S) Static Drain to Source on State Resistance vs. Temperature 20 Drain to Source On State Resistance R DS(on) (m ) Forward Transfer Admittance vs. Drain Current 100 30 10 3 1 0.3 0.1 0.1 V DS = 10 V Pulse Test 0.3 1 3 10 30 100 25 C Tc = -25 C 75 C 12 V GS = 4.5 V 8 4 10 V 0 -40 2 A, 5 A, 10 A 0 40 80 120 160 Case Temperature Tc (C) Drain Current I D (A) 5 HAT2064R Body Drain Diode Reverse Recovery Time 100 Reverse Recovery Time trr (ns) 10000 3000 1000 Coss 300 Crss 100 30 10 0 10 20 30 VGS = 0 f = 1 MHz 40 50 Ciss Typical Capacitance vs. Drain to Source Voltage 50 20 di/dt = 50 A/s VGS = 0, Ta = 25C 5 10 20 I DR (A) 10 0.5 1 2 0.1 0.2 Reverse Drain Current Capacitance C (pF) Drain to Source Voltage V DS (V) Dynamic Input Characteristics V DS (V) 50 V GS 16 V DD = 25 V 10 V 12 5V 8 V GS (V) I D = 16 A 20 200 100 Switching Time t (ns) 50 Switching Characteristics 40 t d(off) tr Drain to Source Voltage 30 Gate to Source Voltage V DS 20 10 5 t d(on) tf 20 10 V DD = 25 V 10 V 5V 20 40 60 80 Gate Charge Qg (nc) 4 0 100 0 2 0.1 0.2 V GS = 10 V , VDS = 10 V Rg = 4.7 , duty < 1 % 0.5 1 2 Drain Current 5 10 I D (A) 20 6 HAT2064R Reverse Drain Current vs. Souece to Drain Voltage 50 Reverse Drain Current I DR (A) 40 10 V 5V V GS = 0 30 20 10 Pulse Test 0 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage V SD (V) Normalized Transient Thermal Impedance vs. Pulse Width 10 Normalized Transient Thermal Impedance s (t) 1 D=1 0.5 0.1 0.2 0.1 0.05 0.02 0.01 0.01 ch - f(t) = s (t) x ch - f ch - f = 83.3 C/W, Ta = 25 C When using the glass epoxy board (FR4 40x40x1.6 mm) u tp lse PDM PW T 0.001 1sh o D= PW T 0.0001 10 100 1m 10 m 100 m 1 10 100 1000 1000 Pulse Width PW (S) 7 HAT2064R Switching Time Test Circuit Vin Monitor Rg D.U.T. RL Vin Vin 10 V V DS = 10 V Vout 10% 10% 90% td(on) tr 90% td(off) tf 10% Vout Monitor Switching Time Waveform 90% 8 HAT2064R Package Dimensions Unit: mm 5.0 Max 8 5 1 4 4.0 Max 1.75 Max 6.2 Max 0.25 Max 0 - 8 1.27 0.51 Max 0.25 Max 1.27 Max 0.15 0.25 M Hitachi code EIAJ JEDEC FP-8DA MS-012AA 9 HAT2064R Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party's rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi's sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi's sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 URL NorthAmerica : http:semiconductor.hitachi.com/ Europe : http://www.hitachi-eu.com/hel/ecg Asia (Singapore) : http://www.has.hitachi.com.sg/grp3/sicd/index.htm Asia (Taiwan) : http://www.hitachi.com.tw/E/Product/SICD_Frame.htm Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm Japan : http://www.hitachi.co.jp/Sicd/index.htm For further information write to: Hitachi Europe GmbH Electronic components Group Dornacher Strae 3 D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 778322 Hitachi Asia Pte. Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: <886> (2) 2718-3666 Fax: <886> (2) 2718-8180 Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: <852> (2) 735 9218 Fax: <852> (2) 730 0281 Telex: 40815 HITEC HX Hitachi Semiconductor (America) Inc. 179 East Tasman Drive, San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223 Copyright ' Hitachi, Ltd., 2000. All rights reserved. Printed in Japan. 10 |
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